Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
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چکیده
منابع مشابه
Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN
Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shapeand morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integrat...
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As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synt...
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Graphene is highly sensitive to environmental influences, and thus, it is worthwhile to deposit protective layers on graphene without impairing its excellent properties. Hexagonal boron nitride (h-BN), a well-known dielectric material, may afford the necessary protection. In this research, we demonstrated the van der Waals epitaxy of h-BN nanosheets on mechanically exfoliated graphene by chemic...
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Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitrid...
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Here we review the characteristics of "van der Waals epitaxy" (vdWE) as an alternative epitaxy mechanism that has been demonstrated as a viable method for circumventing the lattice matching requirements for epitaxial growth. Particular focus is given on the application of vdWE for nonplanar nanostructures. We highlight our works on the vdWE growth of nanowire arrays, tripods, and tetrapods from...
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ژورنال
عنوان ژورنال: NPG Asia Materials
سال: 2014
ISSN: 1884-4049,1884-4057
DOI: 10.1038/am.2014.108